Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding

This work presents the role of graphene in improving performance a porous GaN-based UV photodetector. The photodetector, with mean pore diameter 35 nm, possessed higher sensitivity, about 95% better compared to that as-received (non-porous) In addition, it exhibits lower magnitude leakage current at dark ambient, 70.9 μA, photodetector 13.7 mA. However, is also highly resistive nature due corresponding electrochemical process selectively dissolute doped regions. Herein, two types graphene, derived from CVD and exfoliation (EC) process, were cladded onto GaN region. formation graphene/porous interface, as evident decrease average distance between defects determined Raman spectroscopy, infers charge accumulation conductance, which significantly improved sensing. While shows little improvement, sensitivity was greatly enhanced, by 460% 420% for EC samples. slight difference attributed coverage area on GaN, where CVD-grown tends be continuous while EC-graphene relies aggregation form films.